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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Stranski–Krastanov growth ： ウィキペディア英語版 Stranski–Krastanov growth Stranski–Krastanov growth (SK growth, also Stransky-Krastanov or Stranski-Krastanow) is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938.〔Ivan N. Stranski and Lubomir Krastanow, (1938) ''Abhandlungen der Mathematisch-Naturwissenschaftlichen Klasse IIb. Akademie der Wissenschaften Wien'', 146, 797-810.〕 It wasn’t until 1958 however, in a seminal work by Ernst Bauer published in ''Zeitschrift für Kristallographie'', that the SK, Volmer-Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of intense investigation, not only to better understand the complex thermodynamics and kinetics at the core of thin-film formation, but also as a route to fabricating novel nanostructures for application in the microelectronics industry. ==Modes of thin-film growth== The growth of epitaxial (homogeneous or heterogeneous) thin films on a single crystal surface depends critically on the interaction strength between adatoms and the surface. While it is possible to grow epilayers from a liquid solution, most epitaxial growth occurs via a vapor phase technique such as molecular beam epitaxy (MBE). In Volmer–Weber (VW) growth, adatom–adatom interactions are stronger than those of the adatom with the surface, leading to the formation of three-dimensional adatom clusters or islands.〔 Growth of these clusters, along with coarsening, will cause rough multi-layer films to grow on the substrate surface. Antithetically, during Frank–van der Merwe (FM) growth, adatoms attach preferentially to surface sites resulting in atomically smooth, fully formed layers. This layer-by-layer growth is two-dimensional, indicating that complete films form prior to growth of subsequent layers.〔〔 Stranski–Krastanov growth is an intermediary process characterized by both 2D layer and 3D island growth. Transition from the layer-by-layer to island-based growth occurs at a critical layer thickness which is highly dependent on the chemical and physical properties, such as surface energies and lattice parameters, of the substrate and film.〔〔〔 Figure 1 is a schematic representation of the three main growth modes for various surface coverages. Determining the mechanism by which a thin film grows requires consideration of the chemical potentials of the first few deposited layers.〔 A model for the layer chemical potential per atom has been proposed by Markov as:〔 :$\backslash mu(n)\; =\; \backslash mu\_\backslash infty\; +(-\; \backslash varphi\_a\text{'}(n)\; +\; \backslash varepsilon\_d(n)\; +\; \backslash varepsilon\_e(n))$ where $\backslash mu\_\backslash infty$ is the bulk chemical potential of the adsorbate material, $\backslash varphi\_a$ is the desorption energy of an adsorbate atom from a wetting layer of the same material, $\backslash varphi\_a\text{'}(n)$ the desorption energy of an adsorbate atom from the substrate, $\backslash varepsilon\_d(n)$ is the per atom misfit dislocation energy, and $\backslash varepsilon\_e(n)$ the per atom homogeneous strain energy. In general, the values of $\backslash varphi\_a$, $\backslash varphi\_a\text{'}(n)$, $\backslash varepsilon\_d(n)$, and $\backslash varepsilon\_e(n)$ depend in a complex way on the thickness of the growing layers and lattice misfit between the substrate and adsorbate film. In the limit of small strains, $\backslash varepsilon\_(n)\; \backslash ll\; \backslash mu\_\backslash infty$, the criterion for a film growth mode is dependent on $\backslash frac$. * VW growth: (adatom cohesive force is stronger than surface adhesive force) * FM growth: $\backslash frac\; >\; 0$ (surface adhesive force is stronger than adatom cohesive force) SK growth can be described by both of these inequalities. While initial film growth follows a FM mechanism, i.e. positive differential μ, nontrivial amounts of strain energy accumulate in the deposited layers. At a critical thickness, this strain induces a sign reversal in the chemical potential, i.e. negative differential μ, leading to a switch in the growth mode. At this point it is energetically favorable to nucleate islands and further growth occurs by a VW type mechanism.〔 A thermodynamic criterion for layer growth similar to the one presented above can be obtained using a force balance of surface tensions and contact angle.〔See for example Oura et ''al'' (''Surface Science'') or Venables (''Introduction to Surface and Thin Film Processes'').〕 Since the formation of wetting layers occurs in a commensurate fashion at a crystal surface, there is often an associated misfit between the film and the substrate due to the different lattice parameters of each material. Attachment of the thinner film to the thicker substrate induces a misfit strain at the interface given by $\backslash frac\}\{\; a\_\{s\}\}$. Here $a\_f$ and $a\_s$ are the film and substrate lattice constants, respectively. As the wetting layer thickens, the associated strain energy increases rapidly. In order to relieve the strain, island formation can occur in either a dislocated or coherent fashion. In dislocated islands, strain relief arises by forming interfacial misfit dislocations. The reduction in strain energy accommodated by introducing a dislocation is generally greater than the concomitant cost of increased surface energy associated with creating the clusters. The thickness of the wetting layer at which island nucleation initiates, called the critical thickness $h\_C$, is strongly dependent on the lattice mismatch between the film and substrate, with a greater mismatch leading to smaller critical thicknesses. Values of $h\_C$ can range from submonlayer coverage to up to several monolayers thick.〔 Figure 2 illustrates a dislocated island during SK growth after reaching a critical layer height. A pure edge dislocation is shown at the island interface to illustrate the relieved structure of the cluster. In some cases, most notably the Si/Ge system, nanoscale dislocation-free islands can be formed during SK growth by introducing undulations into the near surface layers of the substrate.〔 These regions of local curvature serve to elastically deform both the substrate and island, relieving accumulated strain and bringing the wetting layer and island lattice constant closer to its bulk value. This elastic instability at $h\_C$ is known as the Grinfeld instability (formerly Asaro–Tiller–Grinfeld; ATG).〔 The resulting islands are ''coherent'' and defect-free, garnering them significant interest for use in nanoscale electronic and optoelectronic devices. Such applications are discussed briefly later. A schematic of the resulting epitaxial structure is shown in figure 3 which highlights the induced radius of curvature at the substrate surface and in the island. Finally, it should be noted that strain stabilization indicative of coherent SK growth decreases with decreasing inter-island separation. At large areal island densities (smaller spacing), curvature effects from neighboring clusters will cause dislocation loops to form leading to defected island creation.〔 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Stranski–Krastanov growth」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.